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| IPB100N06S3-03 IPI100N06S3-03, IPP100N06S3-03 OptiMOS(R)-T Power-Transistor Features * N-channel - Enhancement mode * Automotive AEC Q101 qualified * MSL1 up to 260C peak reflow * 175C operating temperature * Green package (lead free) * Ultra low Rds(on) * 100% Avalanche tested * ESD Class 3 (HBM) EIA/JESD22-A114-B Product Summary V DS R DS(on),max (SMD version) ID 55 3.0 100 V m A PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 Type IPB100N06S3-03 IPI100N06S3-03 IPP100N06S3-03 Package PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 Ordering Code SP0000-87982 SP0000-87992 SP0000-87980 Marking 3PN0603 3PN0603 3PN0603 Maximum ratings, at T j=25 C, unless otherwise specified Parameter Continuous drain current1) Symbol ID Conditions T C=25 C, V GS=10 V T C=100 C, V GS=10 V2) Pulsed drain current2) Avalanche energy, single pulse3) Drain gate voltage2) Gate source voltage4) Power dissipation Operating and storage temperature IEC climatic category; DIN IEC 68-1 I D,pulse E AS V DG V GS P tot T j, T stg T C=25 C T C=25 C I D=50 A Value Unit A 100 100 400 690 55 20 300 -55 ... +175 55/175/56 mJ V V W C Rev. 1.0 page 1 2005-09-16 IPB100N06S3-03 IPI100N06S3-03, IPP100N06S3-03 Parameter Symbol Conditions min. Thermal characteristics2) Thermal resistance, junction - case Thermal resistance, junction ambient, leaded SMD version, device on PCB R thJC R thJA R thJA minimal footprint 6 cm2 cooling area5) Electrical characteristics, at T j=25 C, unless otherwise specified Static characteristics Drain-source breakdown voltage Gate threshold voltage V (BR)DSS V GS=0 V, I D= 1 mA V GS(th) V DS=V GS, I D=230 A V DS=55 V, V GS=0 V, T j=25 C V DS=55 V, V GS=0 V, T j=125 C2) Gate-source leakage current Drain-source on-state resistance I GSS RDS(on) V GS=20 V, V DS=0 V V GS=10 V, I D=80 A V GS=10 V, I D=80 A, SMD version 55 2.1 3.0 4.0 V 0.5 62 62 40 K/W Values typ. max. Unit Zero gate voltage drain current I DSS - 0.01 1 A - 1 1 2.8 2.5 100 100 3.3 3 nA m Rev. 1.0 page 2 2005-09-16 IPB100N06S3-03 IPI100N06S3-03, IPP100N06S3-03 Parameter Symbol Conditions min. Dynamic characteristics2) Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Gate Charge Characteristics2) Gate to source charge Gate to drain charge Gate charge total Gate plateau voltage Reverse Diode Diode continous forward current2) Diode pulse current2) Diode forward voltage IS I S,pulse V SD T C=25 C V GS=0 V, I F=80 A, T j=25 C V R=27.5 V, I F=I S, di F/dt =100 A/s 0.6 0.9 100 400 1.3 V A Q gs Q gd Qg V plateau V DD=11 V, I D=80 A, V GS=0 to 10 V 130 70 320 5.6 480 V nC C iss C oss Crss t d(on) tr t d(off) tf V DD=27.5 V, V GS=10 V, I D=80 A, R G=1.3 V GS=0 V, V DS=25 V, f =1 MHz 21620 3290 3140 54 67 77 60 ns pF Values typ. max. Unit Reverse recovery time2) t rr - 60 ns Reverse recovery charge2) 1) Q rr - 95 - nC Current is limited by bondwire; with an R thJC = 0.5 K/W the chip is able to carry 223 A at 25C. For detailed information see Application Note ANPS071E at www.infineon.com/optimos 2) 3) Defined by design. Not subject to production test. See diagrams 12 and 13. Qualified at -5V and +20V. 4) 5) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm 2 (one layer, 70 m thick) copper area for drain connection. PCB is vertical in still air. Rev. 1.0 page 3 2005-09-16 IPB100N06S3-03 IPI100N06S3-03, IPP100N06S3-03 1 Power dissipation P tot = f(T C); V GS 6 V 2 Drain current I D = f(T C); V GS 6 V 350 120 300 100 250 80 P tot [W] 200 I D [A] 0 50 100 150 200 60 150 40 100 20 50 0 0 0 50 100 150 200 T C [C] T C [C] 3 Safe operating area I D = f(V DS); T C = 25 C; D = 0 parameter: t p 1000 1 s 10 s 100 s 1 ms 4 Max. transient thermal impedance Z thJC = f(t p) parameter: D =t p/T 100 limited by on-state resistance 0.5 100 10-1 0.1 Z thJC [K/W] I D [A] 0.05 10 10-2 0.01 single pulse 1 0.1 1 10 100 10-3 10-6 10-5 10-4 10-3 10-2 10-1 100 V DS [V] t p [s] Rev. 1.0 page 4 2005-09-16 IPB100N06S3-03 IPI100N06S3-03, IPP100N06S3-03 5 Typ. output characteristics I D = f(V DS); T j = 25 C parameter: V GS 400 350 300 7V 10 V 5V 6 Typ. drain-source on-state resistance R DS(on) = (I D); T j = 25 C parameter: V GS 12 5.5 V 10 8 R DS(on) [m] 250 I D [A] 200 150 6.5 V 6 6V 6V 4 8V 10 V 100 5.5 V 2 50 0 0 2 4 6 8 5V 4.5 V 0 0 20 40 60 80 100 120 V DS [V] I D [A] 7 Typ. transfer characteristics I D = f(V GS); V DS = 6V parameter: T j 200 -55 C 25 C 8 Typ. drain-source on-state resistance R DS(on) = f(T j); I D = 80 A; V GS = 10 V 5 175 175 C 4 150 125 R DS(on) [m] 3 I D [A] 100 75 50 2 1 25 0 2 3 4 5 6 7 8 0 -60 -20 20 60 100 140 180 V GS [V] T j [C] Rev. 1.0 page 5 2005-09-16 IPB100N06S3-03 IPI100N06S3-03, IPP100N06S3-03 9 Typ. gate threshold voltage V GS(th) = f(T j); V GS = V DS parameter: I D 4 105 10 Typ. capacitances C = f(V DS); V GS = 0 V; f = 1 MHz 3.5 Ciss 3 2300A V GS(th) [V] C [pF] 230A 2.5 104 Coss Crss 2 1.5 1 -60 -20 20 60 100 140 180 103 0 5 10 15 20 25 30 T j [C] V DS [V] 11 Typical forward diode characteristicis IF = f(VSD) parameter: T j 103 12 Typ. avalanche characteristics I AS = f(t AV) parameter: T j(start) 1000 102 100 25C 100C 150C 175 C 25 C 101 I AV [A] 10 100 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1 1 10 I F [A] 100 1000 V SD [V] t AV [s] Rev. 1.0 page 6 2005-09-16 IPB100N06S3-03 IPI100N06S3-03, IPP100N06S3-03 13 Typical avalanche energy E AS = f(T j) parameter: I D 1400 66 64 1200 30 A 14 Typ. drain-source breakdown voltage V BR(DSS) = f(T j); I D = 1 mA 62 60 1000 40 A E AS [mJ] 800 50 A V BR(DSS) [V] 58 56 54 52 50 600 400 200 48 46 0 50 100 150 200 -60 -20 20 60 100 140 180 0 T j [C] T j [C] 15 Typ. gate charge V GS = f(Q gate); I D = 80 A pulsed parameter: V DD 12 16 Gate charge waveforms 10 11 V 44 V V GS Qg 8 V GS [V] 6 4 2 Q gs Q gd Q gate 0 0 100 200 300 400 500 Q gate [nC] Rev. 1.0 page 7 2005-09-16 IPB100N06S3-03 IPI100N06S3-03, IPP100N06S3-03 Published by Infineon Technologies AG St.-Martin-Strae 53 D-81541 Munchen (c) Infineon Technologies AG 2004 All Rights Reserved. Attention please! The information herein is given to describe certain components and shall not be considered as a guarantee of characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Information For further information on technology, delivery terms and conditions and prices, please contact your nearest Infineon Technologies Office (www.infineon.com) Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact your nearest Infineon Technologies Office. Infineon Technologies' components may only be used in life-support devices or systems with the expressed written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Rev. 1.0 page 8 2005-09-16 |
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